N-Channel Power  MOSFET
70V, 80A, 6.8mΩ


General Description

This N-Channel MOSFET has been designed specifically to 

improve the overall efficiency of DC/DC converters using 

either synchronous or conventional switching PWM 

controllers. It has been optimized for low gate charge, low 

RDs(ON) and fast switching speed.

Features
● Max RDS(on) = 6.8mΩ at VGS=10V,ID =40A
● High performance trench technology for extremely low RDS(on)
● High power and current handling capability

Applications
● DC/DC converters

● DC-DC Synchronous rectification

● Power Managemement for Inverter Systems