N-Channel Enhancement Mode Field

Effect Transistor

Product Summary

● VDS= 100V

● ID= 160A (VGS = 10V)

● RDS(on)≈4.5mΩ@VGS=10V

The MT11G035B SGT MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDs(oNy and Qg . This device is ideal for high-frequency switching and synchronous rectification.

● Excellent gate charge x RDS(on) product(FOM)

● Very low on-resistance RDS(on)

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous rectification