Features

● RDS(on)= 4.6mΩ at VGs = 10V, ID = 30A

● Fast Switching Speed

● Low Gate Charge

● High Performance Trench Technology for Extr emely Low Rps(on)

● High Power and Current Handling Capability

● RoHS Compliant

General Description

This N-ChannelMOSFETis produced usingCHISIC-TECHSemiconductor's advanced PowerTrench process that has beenespecially tailored to minimize the on-state resistance and yetmaintain superior switching performance.

Applications

● DC-DC primary bridge

● DC-DC Synchronous rectification

● Hot swap